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CMP后清洗技术发展历程
引用本文:周国安,徐存良. CMP后清洗技术发展历程[J]. 电子工业专用设备, 2013, 0(8): 9-12,44
作者姓名:周国安  徐存良
作者单位:中国电子科技集团公司第四十五研究所
摘    要:从80年代开始,结合当时最具代表性的CMP设备,分析当时的后清洗技术,如:多槽浸泡式化学湿法清洗、在线清洗、200mm集成清洗、300mm集成清洗及20nm以下的CMP后清洗趋势,每种后清洗技术都结合CMP设备明确分析其技术特色,优点和缺陷。全面阐述CMP工业界的后清洗发展历程。

关 键 词:化学机械平坦化  后清洗  RCA湿法清洗  在线清洗  集成清洗

The Development History of the Post CMP Cleaning Technology
ZHOU Guoan,XU Cunliang. The Development History of the Post CMP Cleaning Technology[J]. Equipment for Electronic Products Marufacturing, 2013, 0(8): 9-12,44
Authors:ZHOU Guoan  XU Cunliang
Affiliation:(The 45th Research Institute of CETC,Beijing 101601,China)
Abstract:The paper analyses the post CMP technology combing with the typical CMP equipment t~om1980s. Such as: Multiple tanks immerse wet chemical cleaning,in-line cleaning,200mm integrated cleaning, 300ram integrated cleaning and the cleaning trend sub the 20nm technology node. Each post CMP cleaning technology combing with the CMP equipment, analyzing its special, advantage and shortage. The paper analyses the industry post CMP cleaning from all aspect.
Keywords:CMP (Chemical mechanism polish)  Post CMP Cleaning  RCA chemical cleaning  In-linecleaning  Integrated cleaning
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