大直径半绝缘4H-SiC单晶生长及表征

采用升华法稳定地生长出7.62 cm半绝缘4H-SiC单晶。通过优化钒掺杂工艺获得了均匀分布的电阻率1011Ω·cm。用激光拉曼光谱仪对晶片进行扫描,结果表明SiC单晶晶型为4H晶型。半绝缘4H-SiC单晶微管密度最好结果小于2 cm-2。用高分辨X射线衍射术表征了7.62 cm 4H-SiC单晶衬底片的结晶质量,（0004）衍射摇摆曲线半峰宽为40＂,说明晶体结晶性较好。

Growth and Characterization of Large Diameter Semi-insulating 4H-SiC Single Crystal

3 inch(7.62 cm)semi-insulating 4H-SiC single crystal are grown using sublimation method.The technique of compensation is optimized to produce a controlled and spatially uniform distribution of electrical resistivity reaching 1011Ω.cm.The polytype of SiC single crystal is 4H polytype using Micro-Raman spectrum.The best quality semi-insulating 4H-SiC substrates demonstrate micropipe density of 2 cm-2.High resolution X-ray diffractometry(HRXRD) is used for evaluation of the 3 inch 4H-SiC substrates quality,the rocking curve of(0004) diffraction shows that single diffraction peak with full width at half maximum of 40 arcsec,which indicates high crystal quality.