Growth and applications of HVPE-GaN nanorods |
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Authors: | Kang Tae Won Kim Hwa-Mok |
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Affiliation: | (1) Institute of Semiconductors, Shandong Normal University, Jinan, 250014, P.R. China; |
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Abstract: | We demonstrate the properties of gallium nitride nanorods by hydride vapor phase epitaxy (HVPE). Single crystalline gallium
nitride nanorods are formed on a sapphire substrate by HVPE. Single crystalline p-type and n-type gallium nitride nanorods
have been grown and characterized by electrical transport measurements. HVPE was used to controllably introduce either magnesium
or silicon dopants during the growth of the gallium nitride nanorods. The electron emission properties of gallium nitride
nanorod array electron emitters were comparable with (or displayed even lower turn-on voltage than) those of carbon nanotubes.
Wide-bandgap current rectifiers with high breakdown voltage (over −10 V) and near-ultraviolet p-n junction LEDs with emission
wavelength of 390 nm, based on the single-rod gallium nitride p-n junction array, were obtained. |
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