Hydrogen sensing performance of Pt?oxide?GaN Schottky diode |
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| Authors: | Tsai Y.-Y. Lin K.-W. Chen H.-I. Hung C.-W. Chen T.-P. Liu W.-C. |
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| Affiliation: | Nat. Cheng-Kung Univ., Tainan; |
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| Abstract: | An interesting Pt-oxide-GaN MOS-type Schottky diode hydrogen sensor with high-sensitivity hydrogen detection over a wide operating temperature regime is demonstrated. Experimentally, a voltage shift of 264.4 mV at a forward current of 1 mA is obtained under 5040 ppm H2/air gas. Also, a large current variation of 0.89 mA in magnitude between air and 5040 ppm H2/air gas is observed under a forward voltage of 0.2 V. Under an inert environment (N2), a so-called Temkin isotherm can be used to interpret the hydrogen adsorption behaviour at the Pt-oxide interface. |
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