| 《国际半导体技术蓝图》(2005版)光刻部分解析 |
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| 引用本文： | 卞志昕.《国际半导体技术蓝图》(2005版)光刻部分解析[J].电子工业专用设备,2006,35(6):3-5,11. |
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| 作者姓名： | 卞志昕 |
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| 作者单位： | 上海图书馆上海科学技术情报研究所,上海,200031 |
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| 摘 要： | 对2005年公布的《国际半导体就十时微蓝图》中光刻部分进行了介绍与分析,并与之前的版本进行比较,列出了光刻技术面临的挑战和潜在技术方案。最后指出,浸入式光刻、纳米压印、极紫外光刻和ML2将是未来几年重点研究对象。
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| 关 键 词： | 国际半导体技术蓝图 光刻 挑战 ITRS |
| 文章编号： | 1004-4507（2006）06-0003-04 |
| 收稿时间： | 05 9 2006 12:00AM |
| 修稿时间： | 2006-05-09 |
Analyzing the Lithography Part of the International Technology Roadmap for Semiconductors (2005 Edition) |
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| BIAN Zhi-xin.Analyzing the Lithography Part of the International Technology Roadmap for Semiconductors (2005 Edition)[J].Equipment for Electronic Products Marufacturing,2006,35(6):3-5,11. |
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| Authors: | BIAN Zhi-xin |
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| Abstract: | This paper introduces and analyzes the lithography part of the International Technology Roadmap for Semiconductors published in 2005, compares with the related part of previous edition, lists the challenges and potential technology schemes. Finally, the primary research objects of lithography in the future are also given. |
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| Keywords: | International Technology Roadmap for Semiconductors Lithography Challenge ITRS |
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