High speed waveguide-integrated photodiodes grown by metal organic molecular beam epitaxy |
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| Authors: | Emeis N Schier M Hoffmann L Heinecke H Baur B |
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| Affiliation: | Siemens Res. Labs., Munchen, Germany; |
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| Abstract: | Using InP/InGaAs layers grown by metal organic molecular beam epitaxy (MOMBE) on semi-insulating (SI) InP substrate the authors have fabricated waveguide-integrated pin-photodiodes working on the principle of evanescent field coupling. A 3 dB cutoff frequency of 9.6 GHz has been found in a 50 Omega system. The 100 mu m long diodes exhibit a capacitance of <0.1 pF at -5 V bias. In addition design criteria are given to improve the speed of the devices.<> |
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