首页 | 本学科首页   官方微博 | 高级检索  
     


L- and S-band low-noise cryogenic GaAs FETamplifiers
Authors:De Panfilis  S Rogers  J
Affiliation:Dept. of Phys. & Astron., Rochester Univ., NY ;
Abstract:The authors present the results of the construction and testing of three cryogenic low-noise GaAs FET amplifiers, based on a National Radio Astronomy Observatory design, to be used in a detector for the axion, a hypothetical particle. The amplifiers are centered on 1.1 GHz, and 2.4 GHz, have a gain of approximately 30 dB in bandwidths of 300 MHz, 225 MHz, and 310 MHz, and have minimum noise temperatures of 7.8 K, 8 K, and 15 K, respectively
Keywords:
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号