L- and S-band low-noise cryogenic GaAs FETamplifiers |
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Authors: | De Panfilis S. Rogers J. |
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Affiliation: | Dept. of Phys. & Astron., Rochester Univ., NY ; |
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Abstract: | The authors present the results of the construction and testing of three cryogenic low-noise GaAs FET amplifiers, based on a National Radio Astronomy Observatory design, to be used in a detector for the axion, a hypothetical particle. The amplifiers are centered on 1.1 GHz, and 2.4 GHz, have a gain of approximately 30 dB in bandwidths of 300 MHz, 225 MHz, and 310 MHz, and have minimum noise temperatures of 7.8 K, 8 K, and 15 K, respectively |
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