Forward biased safe operating area of emitter switched thyristors |
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| Authors: | Iwamuro N. Shekar M.S. Jayant Baliga B. |
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| Affiliation: | Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC; |
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| Abstract: | The physical mechanisms for current saturation and destructive failure of the dual channel emitter switched thyristor (EST) are described. Forward Biased Safe Operating Areas (FBSOAs) at short-circuit state of the 600 V and 2500 V dual channel ESTs are reported. It is demonstrated by numerical simulation that the EST offers a better FBSOA than the IGBT. Experimental measurements are reported that corroborate these calculated results |
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