Depletion Mode HEMT with Refractory Metal Silicide WSi Gate

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Depletion Mode HEMT with Refractory Metal Silicide WSi Gate

Depletion mode HEMT with refractory metal silicide WSi gate has been de-signed and fabricated.Epicated.Epitaxial modulation doping materials were grown by a home-made MBE system.The gate length and width for low noise depletion devices were1.2～1.5μm and 2×160μm respectively.The electron mobility of the fabricated devices is typically 6080cm^2/V·s at 300K and 68000cm^2/V·s at 77K.The sheet electron concentration nsis9×10^11cm^-2，The source-drain contacts with AuGeNi/Au were fabricated using evaporating and lift-off technique.to further reduce the contact resistance,the wafer alloyed at 520℃ for 3min in the hydrogen(H2)gas.Schottky gate was formed using WSi.The transeon-ductance of the depletion mode device is 110～130mS/mm at room temperature,The de-vices can be applied in communication satellite at microwave freqency of 3.83 GHz and radar receiver at 1.5GHz.Its noise figure is about 2～3 dB.