| 二氧化锡纳米线自催化生长及其发光特性研究 |
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| 引用本文： | 李玉国,翟冠楠,张晓森,王宇,方香.二氧化锡纳米线自催化生长及其发光特性研究[J].半导体光电,2013,34(1):62-65. |
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| 作者姓名： | 李玉国 翟冠楠 张晓森 王宇 方香 |
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| 作者单位： | 山东师范大学物理与电子科学学院半导体研究所,济南,250014 |
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| 摘 要： | 在没有添加任何催化剂情况下,通过热蒸发锡粉制备了二氧化锡纳米线.利用扫描电子显微镜,X射线衍射和透射电镜对上述纳米线进行了结构表征.实验结果表明二氧化锡纳米线直径在100～400 nm,长度达数十微米.PL分析表明当激发波长为325 nm时,在581 nm处出现较强的黄色发光峰；在激发波长为250 nm时,在可见光区域579 nm处形成较强的发光峰,同时伴随一个385 nm处较弱的发光峰.二氧化锡纳米线的生长机制符合气-目生长模式.
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| 关 键 词： | SnO2 纳米线 自催化 光致发光 |
| 收稿时间： | 2012/9/10 0:00:00 |
Selfcatalysis Growth of SnO2 Nanowires and Its Photoluminescence Characteristics |
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| LI Yuguo,ZHAI Guangnan,ZHANG Xiaosen,WANG Yu and FANG Xiang.Selfcatalysis Growth of SnO2 Nanowires and Its Photoluminescence Characteristics[J].Semiconductor Optoelectronics,2013,34(1):62-65. |
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| Authors: | LI Yuguo ZHAI Guangnan ZHANG Xiaosen WANG Yu and FANG Xiang |
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| Affiliation: | Research Institute of Semicon.,School of Physical and Electronic Science,Shandong Normal University,Jinan 250014,CHN;Research Institute of Semicon.,School of Physical and Electronic Science,Shandong Normal University,Jinan 250014,CHN;Research Institute of Semicon.,School of Physical and Electronic Science,Shandong Normal University,Jinan 250014,CHN;Research Institute of Semicon.,School of Physical and Electronic Science,Shandong Normal University,Jinan 250014,CHN;Research Institute of Semicon.,School of Physical and Electronic Science,Shandong Normal University,Jinan 250014,CHN |
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| Abstract: | |
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| Keywords: | SnO2 nanowire self catalyzsis photoluminescence |
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