A new type of Schottky tunnel transistor |
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| Authors: | Kimura M Matsudate T |
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| Affiliation: | Dept. of Electr. Eng., Tohoku Gakuin Univ., Tagajo ; |
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| Abstract: | A new type of tunnel transistor, in which electrons can tunnel through a very thin Schottky barrier between an n+- accumulation-layer formed just under a MOS gate for controlling the tunneling current and the Schottky metal, is proposed and demonstrated. This tunnel transistor has no threshold voltage in cathode current Ik vs. cathode voltage Vk curves. Theoretical calculations based on Stratton's tunneling theory are carried out and have trends similar to the experimental results |
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