Improvement on Diamond Nucleation Treated by Pulsed Arc Discharge Plasma |
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Authors: | Ma Zhibin Wan Jun Wang Jianhua
Zhang Wenwen
School of Material Science & Technology Wuhan Institute of Chemical Technology Wuhan China |
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Affiliation: | School of Material Science & Technology, Wuhan Institute of Chemical Technology, Wuhan 430073, China;School of Material Science & Technology, Wuhan Institute of Chemical Technology, Wuhan 430073, China;School of Material Science & Technology, Wuhan Institute of Chemical Technology, Wuhan 430073, China;School of Material Science & Technology, Wuhan Institute of Chemical Technology, Wuhan 430073, China |
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Abstract: | A technique of improvement on diamond nucleation based on pulsed arc discharge plasma at atmospheric pressure was developed. The pulsed arc discharge was induced respectively by nitrogen, argon and methanol gas. After the arc plasma pretreatment, a nucleation density higher than 1010 cm-2 may be obtained subsequently in chemical vapor deposition (CVD) on a mirror-polished silicon substrate without any other mechanical treatment. The effects of the arc discharge plasma on the diamond nucleation were investigated by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), infrared spectroscopy (IR) and Raman spectroscopy. The enhancement of nucleation is postulated to be a result of the formation of carbonlike phase materials or nitrogenation on the substrate surface without surface defect produced by arc discharge. |
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Keywords: | nucleation diamond pulsed arc discharge |
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