Fabrication of transparent conducting amorphous Zn-Sn-In-O thin films by direct current magnetron sputtering |
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Authors: | Cleva W Ow-Yang Hyo-young Yeom |
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Affiliation: | a Sabanci University, Faculty of Engineering and Natural Sciences, Orhanli, Tuzla, 34956 Istanbul, Turkey b Brown University, Division of Engineering, Box D, Providence, Rhode Island 02912, USA |
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Abstract: | Amorphous ZnO-SnO2-In2O3 films were grown by direct current magnetron sputtering from vacuum hot pressed ceramic oxide targets of Zn:In:Sn cation ratios 1:2:1 and 1:2:1.5 onto glass substrates. X-ray diffraction analysis showed that the microstructure remained amorphous during annealing at 200 °C for up to 5 hours. By monitoring the electrical resistivity, oxygen content and substrate temperature were optimized during deposition. The optimal films were characterized by Hall Effect, work function and optical spectroscopy measurements. Films of 1:2:1 composition showed the lowest resistivity (7.6 × 10− 4 Ω-cm), when deposited onto substrates preheated to 300 °C. Transmissivity of all films exceeded 80% in the visible spectral region. The energy gap was 3.52-3.74 eV, and the work function ranged 5.08-5.22 eV, suitable for cathode applications in organic light emitting diodes. Overall, the film characteristics were comparable or superior to those of amorphous tin-doped indium oxide and zinc-doped indium oxide films and may serve as viable, lower-cost alternatives. |
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Keywords: | Transparent conducting oxide Indium tin oxide Amorphous semiconductor physical vapor deposition Photoelectron spectroscopy Work function Optical properties Hall Effect |
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