Nature of the edge electroluminescence peak in the Si:(Er,O) diode breakdown mode |
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Authors: | A M Emel’yanov Yu A Nikolaev N A Sobolev |
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Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia |
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Abstract: | Electroluminescence (EL) of erbium-and oxygen-doped Si:(Er,O) diodes at λ=1.00–1.65 µm has been studied in the p-n junction breakdown and forward current modes. The EL was measured at room temperature from the front and back surfaces of the diodes. A peak corresponding to the absorption band edge of silicon was observed in the EL spectra of some diodes in the p-n junction breakdown mode. The peak is associated with the injection of minority carriers from the metal contact into silicon, with subsequent band-to-band radiative recombination. The band-to-band recombination intensity increases sharply on reaching a certain current density that depends on the fabrication technology. This threshold current density decreases with the temperature of post-implantation annealing of Si:(Er,O) diodes increasing in the range 900–1100°C. |
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