Improving low-temperature APCVD SiO2 passivation byrapid thermal annealing for Si devices |
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Authors: | Sivoththaman S. De Schepper P. Laureys W. Nijs J.F. Mertens R.P. |
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Affiliation: | IMEC, Leuven; |
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Abstract: | The quality of low-temperature (≈400°C) atmospheric pressure chemical vapor deposited (APCVD) silicon dioxide (SiO2 ) films has been improved by a short time rapid thermal annealing (RTA) step. The RTA step followed by a low temperature (400°C) forming gas anneal (FGA) results in a well-passivated Si-SiO2 interface, comparable to thermally grown conventional oxides. Efficient and stable surface passivation is obtained by this technique on virgin silicon as well as on photovoltaic devices with diffused (n+p) emitter surface while maintaining a very low thermal budget. Device parameters are improved by this APCVD/RTA/FGA passivation process |
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