Reaktive hochfrequenz-sputterätzung von SiO2 im CF4-Ar-gasgemisch

The results of an investigation of reactive r.f. sputter etching in a CF₄-Ar gas mixture for opening contact windows in SiO₂, thereby ensuring proper metallization in the production of semiconductor devices, are described. The quality of the photolithographic image, the etching profiles and the morphology of the silicon wafer are interpreted and illustrated by scanning electron photomicrographs. The radiation defects in the Si/SiO₂ system are investigated using high frequency capacitance-voltage measurements. The optimum composition of the gas mixture used was determined, enabling simultaneous complete etching of the SiO₂ film and removal of the negative Waycoat IC 528 resist.