两温区气相输运温度振荡法合成AgGaS2多晶材料

根据对Ag2S-Ga2S3赝二元相图的分析，采用同成分点配料，分别采用一种新方法——两温区气相输运温度振荡法和普通气相输运法合成AgGas2多晶材料。通过XRD对合成AgGaS2多晶的分析，结果发现：新方法合成的原料纯度及均匀性优于普通气相输运法合成的样品。晶体生长实验表明：新方法合成的AgGaS2多晶材料生长出的单晶外观完整、无裂纹，红外透过率达67％，而普通气相输运法合成的多晶材料生长出的单晶体红外透过率36％。因此，两温区气相输运温度振荡法是合成高质量AgGaS2多晶材料的一种较好的新方法。

Synthesis of AgGaS2 Polycrystalline Material by Vapor Transporting Method with Two-zone Temperature Oscillation

According to AgaS- Ga2S3 pseudobinary phasemelt composition were synthesized by a new method, i.e.diagram, AgGaS2 polycrystalline materials with the congruent vapor transporting method with two-zone temperature oscillation, and generic vapor transporting method respectively. XRD results showed that the purity and unifonnity of AgGaS2 polycrystalline materials synthesized by the new method was superior to that synthesized by generic method. The integral and crack-free AgGaS2 single crystal was obtained by modified Bridgrnan method with polycrystalline materials synthesized by the new method. And the infrared transmittance of it was 67 % and, comparatively, that of single crystal grown with polycrystalline materials synthesized by generic method was only 36%. The results indicated that the vapor transporting method with two-zone temperature oscillation was preferable for synthesizing high-quality AgGaS2 polycrystalline materials.