| Abstract: | The principle, imaging condition and experimental
method for obtaining high resolution composition contrast in secondary electron image were
described. A new technique of specimen preparation for secondary electron composition
contrast observation was introduced and discussed. By using multilayer P Si1-xGex/pSi
heterojunction internal photoemission infrared detector as an example, the applications of
secondary electron composition contrast imaging in microstructure studies on heterojunction
semiconducting materials and devices were stated. The characteristics of the image were
compared with the ordinary transmission electron diffraction contrast image. The prospects of
applications of the imaging method in heterojunction semiconductor devices and multilayer
materials are also discussed. |
