| 高压金属场限环的研究 |
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| 引用本文： | 张硕,吴正元.高压金属场限环的研究[J].微电子学,1993,23(1):38-42. |
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| 作者姓名： | 张硕 吴正元 |
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| 作者单位： | 华中理工大学固体电子学系 湖北武汉430074
(张硕)，华中理工大学固体电子学系 湖北武汉430074(吴正元) |
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| 摘 要： | 平面功率器件由于终端pp结的曲率效应,其高压阻断能力受到限制,为了提高高压阻断能力,本文研究了金属场限环的工作机理,进行了金属场限环结构参数的设计,阐述了其制造工艺和实验结果;并和扩散场限环进行了比较,证实了金属场限环是一种工艺简单、对工艺要求低的高压终端技术。
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| 关 键 词： | 终端技术 功率器件 金属场限环 |
A Study on High-Voltage Metal Field-Limited-Rings |
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| Zhang Shuo and Wu Zhengyuan
Deft,Solid-State Electronics,Huazhong University of Sci. & Technol. .Wuhan,. Hubei.A Study on High-Voltage Metal Field-Limited-Rings[J].Microelectronics,1993,23(1):38-42. |
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| Authors: | Zhang Shuo and Wu Zhengyuan
Deft Solid-State Electronics Huazhong University of Sci & Technol Wuhan Hubei |
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| Affiliation: | Zhang Shuo and Wu Zhengyuan
Deft,Solid-State Electronics,Huazhong University of Sci. & Technol. 430074.Wuhan,. Hubei |
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| Abstract: | The planar power device's capability of blocking high voltage is limited due to the curvature effects resulting from its terminal p-n junction. The physical principle of metal field-limited-rings has been studied and analyzed to achieve higher breakdown voltage. The structure parameters of the metal ring are designed. The processing technology for metal field-limited-rings is described and test results are given. A comparison with diffused field-limited-rings shows that the metal field-limited-ring is easier to make and less sensitive to process variations. |
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| Keywords: | Floating field-limited-ring Junction termination technique Planar power device |
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