| 基于InP衬底的GaAsSb/InP异质结晶体管 |
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| 引用本文： | 徐现刚,刘喆,崔得良. 基于InP衬底的GaAsSb/InP异质结晶体管[J]. 半导体学报, 2002, 23(9): 962-965. DOI: 10.3969/j.issn.1674-4926.2002.09.013 |
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| 作者姓名： | 徐现刚 刘喆 崔得良 |
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| 作者单位： | 山东大学晶体材料国家重点实验室,济南,250100 |
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| 基金项目： | 国家自然科学基金;60025409; |
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| 摘 要： | 采用金属有机化学气相沉积生长了InP/GaAs0.5Sb0.5/InP 双异质结晶体三极管(DHBT)材料,研究了材料质量对器件性能的影响.制备的器件不但具有非常好的直流特性,而且还表现出良好的微波特性,其结果与能带理论的预言一致,DHBT集电结和发射结的电流理想因子分别为1.00和1.06,击穿电压高达15V,电流放大增益截止频率超过100GHz.
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| 关 键 词： | GaAsSb InP MOCVD 双异质结晶体三极管 |
| 文章编号： | 0253-4177(2002)09-0962-04 |
| 修稿时间： | 2001-11-22 |
GaAsSb/InP HBT Growth on InP Substrates |
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| Xu Xian''''gang,Liu Zhe and Cui Deliang. GaAsSb/InP HBT Growth on InP Substrates[J]. Chinese Journal of Semiconductors, 2002, 23(9): 962-965. DOI: 10.3969/j.issn.1674-4926.2002.09.013 |
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| Authors: | Xu Xian''''gang Liu Zhe Cui Deliang |
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| Abstract: | InP/GaAs 0.5 Sb 0.5 /InP DHBT (double heterojunction bipolar transistor) is grown by MOCVD (metalorganic chemical vapor deposition).The influence of material quality on device performance is studied.DHBTs with high quality epilayers show good direct current and microwave performance,which are in agreement with energy band engineering.The collector and base current ideality factors are 1 00 and 1 06,respectively.The DHBTs breakdown voltage can be as high as 15V,and microwave measurements indicate a current gain cutoff frequency f T of over 100GHz . |
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| Keywords: | GaAsSb InP MOCVD DHBT |
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