Numerical Study of C–V Characteristics of Double-Gate Ultrathin SOI MOSFETs |
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Authors: | Watanabe H Uchida K Kinoshita A |
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Affiliation: | Toshiba Corp., Yokohama; |
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Abstract: | Capacitance-voltage (C-V) characteristics of double-gate ultrathin silicon-on-insulator (SOI) MOSFETs are numerically investigated in detail. The measured back-gate bias dependence is reproduced by the Poisson-Schrodinger solver including the highly precise physical models for many-body interactions of carrier-carrier and carrier-ion, and for incomplete ionization of doping impurities in whole semiconductor regions of n+poly-Si/oxide/SOI/oxide/p-Si capacitor including the volume inversion. In addition, we study the higher subband effect at higher temperature in detail, in order to deduce the impacts of self-heating and nonstatic transport |
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