The effect of built-in electric field in GaN/AlGaN quantum wells with high AIN mole fraction |
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Authors: | H M Ng R Harel S N G Chu A Y Cho |
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Affiliation: | (1) Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, 07974 Murray Hill, NJ, USA |
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Abstract: | Spontaneous and piezoelectric polarization in hexagonal GaN/AlGaN heterostructures give rise to large built-in electric fields.
The effect of the builtin electric field in GaN/AlxGa1−xN quantum wells was investigated for x=0.2 to 0.8 by photoluminescence studies. The quantum well structures were grown by
molecular beam epitaxy on (0001) sapphire substrates. Cross-sectional transmission electron microscopy performed on the samples
revealed abrupt interfaces and uniform layer thicknesses. The low temperature (4 K) photoluminescence peaks were progressively
red-shifted due to the quantum confined Stark effect depending on the AlN mole fraction in the barriers and the thickness
of the GaN quantum well. Our results verify the existence of very large built-in electric fields of up to 5 MV/cm in GaN/Al0.8Ga0.2N quantum wells. |
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Keywords: | GaN AlGaN built-in field molecular beam epitaxy |
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