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| PLD工艺制备高质量ZnO/Si异质外延薄膜 | |
| 引用本文： | 赵杰,胡礼中,王维维.PLD工艺制备高质量ZnO/Si异质外延薄膜[J].功能材料,2009,40(6). |
| 作者姓名： | 赵杰 胡礼中 王维维 |
| 作者单位： | 1. 大连理工大学,物理与光电工程学院,辽宁,大连,116024;中国科学院半导体研究所材料科学中心,北京,100083 2. 大连理工大学,物理与光电工程学院,辽宁,大连,116024 3. 中国科学院半导体研究所材料科学中心,北京,100083 |
| 基金项目： | 国家自然科学基金资助项目(60777009); 辽宁省教育厅重点实验室资助项目(20060131) |
| 摘 要： | 采用脉冲激光沉积工艺在不同条件下以Si(111)为衬底制备了Zno薄膜.通过对不同氧压下(0～50Pa)沉积的样品的室温PL谱测试表明,氧气氛显著地提高了薄膜的发光质量,在50Pa氧气中沉积的ZnO薄膜具有最强的近带边UV发射.XRD测试说明在氧气氛中得到的薄膜结晶质量较差,没有单一的(002)取向.利用-低温(500℃)沉积的ZnO薄膜作缓冲层,得到了高质量的ZnO外延膜.与直接沉积的ZnO膜相比,生长在缓冲层上的ZnO膜展现出规则的斑点状衍射花样,而且拥有更强的UV发射和更窄的UV峰半高宽(98meV).对不同温度下沉积的缓冲层进行了RHEED表征,结果表明,在600～650℃之间生长缓冲层,有望进一步改善ZnO外延膜的质量. |
| 关 键 词： | ZnO薄膜 光致发光 X射线衍射 反射式高能电子衍射 |
Fabrication of high-quality ZnO/Si heteroepitaxial films by pulsed laser deposition |
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| ZHAO Jie , HU Li-zhong , WANG Wei-wei.Fabrication of high-quality ZnO/Si heteroepitaxial films by pulsed laser deposition[J].Journal of Functional Materials,2009,40(6). | |
| Authors: | ZHAO Jie HU Li-zhong WANG Wei-wei |
| Affiliation: | ZHAO Jie1,2,HU Li-zhong1,WANG Wei-wei3 (1. School of Physics and Optoelectronic Technology,Dalian University of Technology,Dalian 116024,China,2. Material Science Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,3. Department of Engineering Mechanics,Kunming University of Science and Technology,Kunming 650093,China) |
| Abstract: | ZnO films have been synthesized on Si(111) substrates by pulsed laser deposition (PLD) under various conditions. For the specimens deposited at different oxygen pressures between 0 and 50Pa, room-temperature (RT) photoluminescence (PL) measurement indicates the optical properties are dramatically enhanced by introducing oxygen into the growth chamber. The specimen deposited at 50 Pa possesses the most intensive near-band-edge (NBE) emission. However, XRD results show the structural properties of ZnO thin fi... |
| Keywords: | ZnO thin films photoluminescence X-ray diffraction reflection high-energy electron diffraction |
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