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Structural evolution in Fe ion implanted Si upon thermal annealing |
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| Authors: | Keisuke Omae In-Tae Bae Muneyuki Naito Manabu Ishimaru Yoshihiko Hirotsu James A Valdez Kurt E Sickafus |
| Affiliation: | aThe Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan bMaterials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87545, USA |
| Abstract: | We have performed high-dose Fe ion implantation into Si and characterized ion-beam-induced microstructures as well as annealing-induced ones using transmission electron microscopy (TEM) and grazing-incidence X-ray diffraction (GIXRD). Single crystals of Si(1 0 0) substrate were irradiated at 623 K with 120 keV Fe+ ions to a fluence of 4 × 1017 cm?2. The irradiated samples were then annealed in a vacuum furnace at temperatures ranging from 773 K to 1073 K. Cross-sectional TEM observations and GIXRD measurements revealed that a layered structure is formed in the as-implanted specimen with ε-FeSi, β-FeSi2 and damaged Si, as component layers. A continuous β-FeSi2 layer was formed on the topmost layer of the Si substrate after thermal annealing. |
| Keywords: | Silicides Transmission electron microscopy Grazing-incidence X-ray diffraction Energy-dispersive X-ray spectroscopy |
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