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新型sol-gel技术制备BST 0-3型厚膜
引用本文:陈书厅,姚熹,张良莹. 新型sol-gel技术制备BST 0-3型厚膜[J]. 电子元件与材料, 2005, 24(1): 19-21
作者姓名:陈书厅  姚熹  张良莹
作者单位:同济大学功能材料研究所,上海,200092;同济大学功能材料研究所,上海,200092;同济大学功能材料研究所,上海,200092
基金项目:国家重点基础研究发展计划(973计划);上海市学科科研项目
摘    要:采用传统高温固相烧结法合成了Ba0.6Sr0.4TiO3(BST)陶瓷粉,并用高能球磨法将其细化为纳米粉,均匀分散于组分相同的BST溶胶中,形成稳定的厚膜先体溶液,而后用匀胶法制备出厚度约为6.5μm的BST厚膜。XRD测试结果表明,650℃热处理后的厚膜为单一钙钛矿相。SEM观测显示厚膜表面均匀一致,无裂纹出现。800℃热处理后的厚膜在室温、频率1kHz下相对介电常数εr和介质损耗tgδ分别为455、0.036。

关 键 词:无机非金属材料  BST厚膜  新型sol-gel技术  高能球磨  介电性能
文章编号:1001-2028(2005)01-0019-03

Fabrication of BST Thick Films Using a New Sol-gel Process
CHEN Shu-ting,YAO Xi,ZHANG Liang-ying. Fabrication of BST Thick Films Using a New Sol-gel Process[J]. Electronic Components & Materials, 2005, 24(1): 19-21
Authors:CHEN Shu-ting  YAO Xi  ZHANG Liang-ying
Abstract:Ba0.6Sr0.4TiO3 powders were produced by conventional high temperature solid-state reactions method. Then the powders were ball milled into sizes of nanometer by a higher energy planetary ball mill machine and uniformly dispersed into BST sol-gel matrix whose composition is same as the powders. 6.5 μm thick films were fabricated using a spin-coating method. The XRD analysis indicates that the thick films annealed at 650℃ possess single-phase perovskite type structure. The SEM micrograph shows that the thick films are uniform and crack-free. Dielectric constant εr and dielectric loss tgδ of the thick film annealed at 800℃ are 455, 0.036, respectively.
Keywords:inorganic non-metallic materials  BST thick film  new sol-gel technology  high energy ball-milling  dielectric properties
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