| 中子辐照对硅片表面氧化层错的抑制作用 |
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| 引用本文： | 李养贤,鞠玉林.中子辐照对硅片表面氧化层错的抑制作用[J].固体电子学研究与进展,1995,15(1):80-83. |
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| 作者姓名： | 李养贤 鞠玉林 |
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| 作者单位： | 河北工学院材料研究中心 |
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| 基金项目： | 天津市21世纪青年自然科学基金,高纯硅国家重点实验室基金 |
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| 摘 要： | 对硅片表面氧化层错形成机理进行了探讨。并通过中子辐照在直拉硅中引入缺陷，利用辐照缺陷和硅中氧的相互作用，强烈抑制硅片表面氧化层错的产生。
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| 关 键 词： | 表面氧化层错，中子辐照 |
The Depressing Action of Neutron Irradiation Upon Oxide Fault on Silicon Surface |
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| Li Yangxian,Ju Yulin,Liu Caichi.The Depressing Action of Neutron Irradiation Upon Oxide Fault on Silicon Surface[J].Research & Progress of Solid State Electronics,1995,15(1):80-83. |
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| Authors: | Li Yangxian Ju Yulin Liu Caichi |
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| Abstract: | The generation mechanism of oxide fault on silicon surface is studiedin this paper. By using neutron irradiation, defects were introduced into verticalpulled silicon. The interaction of the irradiated defects with oxygen in the silicon canstrongly depress the generation of oxide fault on the silicon surface. |
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| Keywords: | Surface Oxide Fault Neutron Irradiation |
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