Parameter evaluation in automated digital deep-level transientspectroscopy (DLTS) |
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Authors: | Nener B.D. Lai S.T. Faraone L. Nassibian A.G. |
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Affiliation: | Dept. of Electr. & Electron. Eng., Western Australia Univ., Nedlands, WA; |
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Abstract: | A method of directly evaluating the activation energy ΔE, capture cross section σ, and density NT, of deep-level traps from the pulsed reverse bias capacitance transient is described. The main advantages of this technique are that it requires only a single temperature scan, and it can resolve nonexponential transients due to closely-spaced energy levels. The test samples used for this paper consisted of Schottky diodes fabricated on nonirradiated and 1-MeV electron-irradiated n-type VPE (vapor-phase epitaxy) GaAs wafers. The well known EL2 trap was identified with ΔE of 0.81 eV, and σ n of 1.0×10-13 cm2 for the nonirradiated sample. These values were found to be in good agreement with published data using established, conventional DLTS techniques. For the irradiated samples a nonexponential capacitance transient was found in the EL2 range of temperatures. The discussed technique was able to resolve two closely spaced deep levels lying at Ec-0.81 eV and Ec-0.84 eV, and with capture cross sections of 1.5×10-13 cm2 and 2.5×10-12 cm2, respectively |
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