MESFET-like transferred-electron devices in In/sub 0.53/Ga/sub 0.47/As |
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| Authors: | Hahn D Zwinge G Schlachetzki A |
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| Affiliation: | Tech. Univ. Braunschweig, Germany; |
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| Abstract: | In/sub 0.53/Ga/sub 0.47/As transferred-electron devices with Schottky-gate electrodes were fabricated. These devices can be used in optoelectronic circuits on InP or as millimetre wave oscillators. For the realisation of the gate electrode several enhancement layers were tested to increase the Schottky barrier height on In/sub 0.53/Ga/sub 0.47/As. The triggering of single dipole domains in the device was demonstrated.<> |
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