Structures and physical properties of sputtered amorphous SiC films |
| |
Authors: | Hiroyuki Matsunami Hagio Masahiro Tetsuro Tanaka |
| |
Affiliation: | (1) Department of Electronics Faculty of Engineering, Kyoto University, Kyoto, Japan;(2) Present address: Matsushita Electronic Corporation, Saiwai-cho, Takatsuki, Osaka, Japan |
| |
Abstract: | Optical and electrical properties have been measured for amorphous SiC films prepared by rf sputtering in a pure Ar atmosphere
with a sintered 6H-SiC target. The absorption edge E0 determined from the relation of αhΝ = B(hΝ-E0)2 ranged from 1.45 to 1.80 eV depending on the film thickness and the substrate temperature. The room temperature electrical
conductivity is in the range of 5.4×10−11 and 1.4×10−5 Ω−1cm−1. The absorption edge decreases and the conductivity increases with increasing film thickness. The absorption edge shifts
to shorter wavelengths (blue shift) and the conductivity decreases during annealing below 400‡C for 60 min, whereas the absorption
edge shifts to the longer wavelength side (red shift) and the conductivity increases during annealing at 800‡C It is proposed
that the two annealing processes cause structural changes in amorphous SiC films, one of which involves removal of defects
or voids while the other involves rearrangement or rebonding of the component atoms. |
| |
Keywords: | amorphous SiC sputtering optical properties electrical properties structures annealing |
本文献已被 SpringerLink 等数据库收录! |