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退火对Al-Sb多层薄膜的影响
引用本文:贺剑雄,武莉莉,郝霞,郑家贵,冯良桓,张静全. 退火对Al-Sb多层薄膜的影响[J]. 无机材料学报, 2010, 25(1): 27-31. DOI: 10.3724/SP.J.1077.2010.00027
作者姓名:贺剑雄  武莉莉  郝霞  郑家贵  冯良桓  张静全
作者单位:(四川大学材料科学与工程学院,成都610064)
基金项目:国家高技术研究与发展计划(2006AA05Z418)
摘    要:采用直流磁控溅射法制备Al和Sb交替层,在真空环境下进行高温退火后得到了AlSb多晶薄膜.通过X射线衍射(XRD)、霍尔效应、暗电导率温度关系以及透反射光谱研究了薄膜的结构、电学和光学性质.结果表明,退火后形成的AlSb多晶薄膜呈立方相,沿(111)择优取向,且导电类型是P型,载流子浓度为1019cm-3,吸收系数在可见光波段大于104cm-1.样品在580℃退火后,间接跃迁光能隙为1.64eV,且升温电导激活能为0.01eV和0.11eV.此方法制备的AlSb多晶薄膜应用于TCO/CdS/AlSb/ZnTe:Cu/Au结构的太阳能电池中,得到了107mV的开路电压.

关 键 词:Al-Sb薄膜  磁控溅射法  退火
收稿时间:2009-05-14
修稿时间:2009-07-07

Effect of Annealing on Al-Sb Multilayer Films
HE Jian-Xiong,WU Li-Li,HAO Xia,ZHENG Jia-Gui,FENG Liang-Huan,ZHANG Jing-Quan. Effect of Annealing on Al-Sb Multilayer Films[J]. Journal of Inorganic Materials, 2010, 25(1): 27-31. DOI: 10.3724/SP.J.1077.2010.00027
Authors:HE Jian-Xiong  WU Li-Li  HAO Xia  ZHENG Jia-Gui  FENG Liang-Huan  ZHANG Jing-Quan
Affiliation:(CollegeofMaterialsScienceandEngineering,SichuanUniversity,Chengdu610064,China)
Abstract:The metallic films of Al and Sb were deposited alternately on quartz glass substrates by magnetron sputtering method and then annealed at high-temperature in vacuum to obtain AlSb polycrystalline.The structural,electrical and optical properties of the films before and after annealing were studied with X-ray diffraction(XRD),Hall effect,the temperature dependence of the dark conductivity and UV-Vis transmission and reflection spectra.XRD results show that Al-Sb multilayers transform to AlSb polycrystalline c...
Keywords:Al-Sb film  magnetron sputtering  anneal
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