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半导体问题的特征有限元方法和H1模估计
引用本文:刘蕴贤.半导体问题的特征有限元方法和H1模估计[J].工程数学学报,2003,20(6):7-13.
作者姓名:刘蕴贤
作者单位:山东大学数学与系统科学学院,济南,250100
基金项目:国家自然科学基金,国家自然科学基金,,TY10126029,,
摘    要:研究三维热传导型半导体瞬态问题的特征有限元方法及其理论分析,其数学模型是一类非线性偏微分方程的初边值问题。对电子位势方程提出Galerkin逼近;对电子、空穴浓度方程采用特征有限元逼近;对热传导方程采用对时间向后差分的Galerkin逼近。应用微分方程先验估计理论和技巧得到了最优阶H^1误差估计。

关 键 词:特征有限元  半导体瞬态  热传导  最优误差估计
文章编号:1005-3085(2003)06-0007-07

Characteristic Element Methods and H1 Error Estimates for the Semiconductor Problem
LIU Yun-xian.Characteristic Element Methods and H1 Error Estimates for the Semiconductor Problem[J].Chinese Journal of Engineering Mathematics,2003,20(6):7-13.
Authors:LIU Yun-xian
Abstract:Characteristic element methods are introduced and analyzed for approximating the solutions of three-dimensional transient behavior of semiconductor with heat-conduction, whose mathematical model is initial and boundary problem of nonlinear partial differential equation system. Electric potential and heat-conduction equation are approximated by a Galerkin procedures. electron and hole concentrations are approximated by characteristic element methods. Optimal order error estimates in H~1 are demonstrated.
Keywords:transient behavior of semiconductor  heat-conduction  characteristic element  optimal error estimate
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