Effect of Cu layer thickness on the structural, optical and electrical properties of AZO/Cu/AZO tri-layer films |
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Authors: | Shumei Song Tianlin Yang Maoshui Lv Yanqing Xin Zhongchen Wu |
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Affiliation: | a School of Space Science and Physics, Shandong University at Weihai, Weihai 264209, Shandong, PR China b School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, Shandong, PR China |
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Abstract: | Highly conducting AZO/Cu/AZO tri-layer films were successfully deposited on glass substrates by RF magnetron sputtering of Al-doped ZnO (AZO) and ion-beam sputtering of Cu at room temperature. The microstructures of the AZO/Cu/AZO multilayer films were studied using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and atomic force microscope (AFM). X-Ray diffraction measurements indicate that the AZO layers in the tri-layer films are polycrystalline with the ZnO hexagonal structure and have a preferred orientation with the c-axis perpendicular to the substrates. With the increase of Cu thickness, the crystallinity of AZO and Cu layers is simultaneously improved. When the Cu thickness increases from 3 to 13 nm, the resistivity decreases initially and then varies little, and the average transmittance shows a first increase and then decreases. The maximum figure of merit achieved is 1.94 × 10−2 Ω−1 for a Cu thickness of 8 nm with a resistivity of 7.92 × 10−5 Ω cm and an average transmittance of 84%. |
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Keywords: | AZO Tri-layer films Ion-beam sputtering RF magnetron sputtering Transparent conducting films |
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