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Fabrication and characterization of n-CdSe0.7Te0.3/p-CdSe0.15Te0.85 solar cell |
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| Authors: | N Muthukumarasamy S Velumani S Jayakumar |
| Affiliation: | a Physics Department, Coimbatore Institute of Technology, Coimbatore-641014, India b Department of Electrical Engineering (SEES), CINVESTAV-IPN, Zacatenco, Avenida IPN #2508, Col Zacatenco, D.F., C.P. 07360, Mexico c Thin Film Centre, P.S.G. College of Technology, Coimbatore-641004, India |
| Abstract: | Hot wall deposited CdSexTe1−x where 0 ≤ x ≤ 1 thin films for solar cell applications have been prepared from a compound synthesized by direct reaction of high purity Cd, Se and Te elements. Crystal structure and composition of the films were analyzed by X-ray diffraction, scanning electron microscope and EDAX. X-ray diffraction studies carried out on pseudo-binary system revealed that the films are polycrystalline in nature with CdSe0.7Te0.3 film exhibiting hexagonal structure and CdSe0.15Te0.85 film exhibiting cubic zinc blende structure. The type of conduction was determined by Hall studies. A novel solar cell with structure n-CdSe0.7Te0.3/p-CdSe0.15Te0.85 has been fabricated and the efficiency was found to be 3.13%. |
| Keywords: | 61 10Nz 68 37 Hk 81 15 Ef 89 30 Cc |
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