Molecular dynamics simulations for gas cluster ion beam processes |
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Authors: | Takaaki Aoki Toshio Seki |
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Affiliation: | a Dept. of Electronic Science and Engineering, Kyoto University, Nishikyo-ku, Kyoto, Japan b Dept. of Nuclear Engineering, Kyoto University, Nishikyo-ku, Kyoto, Japan c Quantum Science and Engineering Center, Kyoto University, Nishikyo-ku, Kyoto, Japan |
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Abstract: | Molecular dynamics (MD) simulations of large argon clusters impacting on silicon targets were performed. The characteristics of crater formation, a typical collisional effect with large cluster impact were examined from the viewpoint of incident energy, cluster size and incident angle. The MD simulation results suggested that the condition where an incident cluster penetrates into the solid target and causes a crater is mainly dominated by the incident energy-per-atom rather than total incident energy of the cluster. Additionally, the MD simulations of sequential multiple cluster impacts and grazing-angle cluster irradiation on irregular surface structures were studied to characterize the surface modification effects with large cluster ion beam process. |
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Keywords: | Cluster ion beam Molecular dynamics simulation Crater formation Surface modification |
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