Epitaxial growth and thermal stability of silicon layers on crystalline gadolinium oxide |
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Authors: | R Dargis A Fissel E Bugiel T Wietler HJ Osten |
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Affiliation: | a Information Technology Laboratory, Leibniz University of Hannover, Schneiderberg 32, D-30167 Hannover, Germany b Institut of Electronic Materials and Devices, Leibniz University of Hannover, Appelstraße 11A, D-30167 Hannover, Germany |
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Abstract: | In this work, an unconventional approach for epitaxial growth of Si on single-crystalline rare-earth oxide is presented using molecular beam epitaxy under ultra-high vacuum. Surface and bulk crystalline structures as well as chemical content were examined. Silicon-on-insulator layers were fabricated by encapsulated solid phase epitaxy on Si(111) substrate. The gadolinium oxide capping layer was removed by wet-chemical etching. The remaining silicon layer is single crystalline without any impurities and exhibits 7 × 7 reconstructed surface after annealing in very low silicon flux in the growth chamber. The thermal stability of the fabricated silicon-on-insulator structure was studied by step-wise heating under ultra-high vacuum conditions. The fabricated ultra-thin (10-15 nm) silicon-on-oxide layers remain structurally and chemically stable up to 900 °C. |
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Keywords: | Rare-earth oxide Silicon-on-insulator Molecular beam epitaxy |
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