Study on Raman line at 1080.2 cm in ZnO thin films prepared under high RF power

ZnO thin films were prepared on glass or on homo-buffer/glass by a RF magnetron sputtering method at RF power of 100-550 W. The structural and Raman characteristics of the films were analyzed by X-ray diffraction and Raman scattering. There appeared a sharp peak of 1080.2 cm⁻¹ near the A₁(2LO) mode (1156 cm⁻¹) of ZnO in the Raman spectra when the RF power was higher than 300 W. In this case, the (100) peak of ZnO film appeared obviously. It was speculated that the Raman mode at 1080.2 cm⁻¹ was induced by the ordered distribution of Zn_i defects in ZnO lattice.