Stress reduction and electric properties of InSb thin films grown by metalorganic vapor phase epitaxy on sapphire substrates with an InAs buffer layer |
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Authors: | Shigeo Yamaguchi Masashi Matsumoto |
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Affiliation: | Department of Electronics, Informatics, and Frontiers, Kanagawa University, 3-27-1 Rokkakubashi, Kanagawa-ku, Yokohama 221-8686, Japan |
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Abstract: | InSb thin films were grown by metalorganic vapor phase epitaxy using an InAs buffer layer on sapphire (0001) substrates. The stresses and strains in InSb were controlled by the thickness of the InAs buffer layer, and it was found that with decreasing compressive stress in InSb, the crystalline quality and the electrical properties improved. The thermoelectric properties of InSb were assessed and it was found that the power factor of InSb with a thickness of 5 μm reached as high as 5.8 × 10−3 W/mK2 at 600 K. |
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Keywords: | InSb InAs MOVPE Stress Strain Sapphire |
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