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PZT thick films by diol chemical solution deposition
Authors:S Gentil  M Kohli  A Seifert
Affiliation:(1) EPFL-STI-IMX, Ceramic Laboratory, Lausanne, Switzerland;(2) IR Microsystems, PSE-C, Lausanne, Switzerland
Abstract:Process optimization and properties of lead zirconate titanate (PZT) films for piezoelectric micromachined ultrasonic transducers (pMUTs) for scanning probe devices will be presented. The goal of the work was a replacement of the tetragenic and mutagenic solvent and a decrease of time-consuming PZT 2–methoxy ethanol (2MOE) route. An alternative diol-based solution synthesis process was developed and “Design Of Experiment” (DOE) was used to achieve processing optimization for thick and crack free films. Tight parameter control allowed to develop a highly reproducible PZT diol process. The crystallization behaviour of crack-free PbZr0.53Ti0.47O3 films (1–5 μm) with oriented perovskite structure was examined by X-ray diffraction and surface analysis using scanning electron microscopy. Piezoelectric and dielectric properties were examined. The effective transverse piezoelectric coefficient e 31,f of sol–gel processed films was investigated for 4 μm thick layers. Best properties were achieved with {1 0 0}-textured films, where a remanent e 31,f value of −7.3 C/m2 was measured for 4.1 μm thick films.
Keywords:PMUT  PZT film  Design of experiment  Chemical solution deposition  Diol based solutions
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