Dosage modeling for deep x-ray lithography application |
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| Authors: | W.-P. Shih G.-J. Hwang B.-Y. Shew Y. Cheng |
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| Affiliation: | (1) Power Mechanical Engineering Department, National Tsing Hua University, Hsinchu, Taiwan, R.O.C., TW;(2) Synchrotron Radiation Research Center, Hsinchu, Taiwan, R.O.C., TW |
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| Abstract: | A analytical dosage model was established to study exposure parameters of deep x-ray lithography systematically. It provided a reasonable guild line for deciding exposure parameters, selecting masks and filters in radiating process. Calculated results showed a good agreement with experiment results. Both of the single and multiple exposure processes were investigated in present study. Received: 25 August 1997/Accepted: 3 September 1997 |
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