Low-temperature MBE-grown In/sub 0.52/Ga/sub 0.18/Al/sub 0.30/As/InP optical waveguides |
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| Authors: | Kunzel H Grote N Albrecht P Bottcher J Bornholdt C |
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| Affiliation: | Heinrich-Hertz Inst. fur Nachrichtentech. Berlin GmbH, Germany; |
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| Abstract: | The MBE growth of In/sub 0.52/Ga/sub 0.18/Al/sub 0.30/As ( lambda /sub g/=1.06 mu m) layers in the temperature range of 400-450 degrees C was demonstrated to give high-quality optical waveguides which not only exhibit low propagation losses as low as 0.5 dB/cm at lambda =1.55 mu m but concomitantly high resistivity of >10/sup 4/ Omega cm. The refractive index of In/sub 0.52/Ga/sub 0.18/Al/sub 0.30/As was estimated to be 3.207+or-0.03 at lambda =1.55 mu m.<> |
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