Nickel and copper deposition on Al2O3 and SiC particulates by using the chemical vapour deposition–fluidized bed reactor technique

A chemical vapour deposition–fluidized bed reactor technique was developed to perform metal deposition on ceramic particulates. Experiments of nickel and copper deposition on Al₂O₃ and SiC particulates were conducted. Argon was used as the carrier gas to fluidize the ceramic particulates. The metal–H–Cl system was selected for the chemical vapour deposition. The volumetric ratios of the inlet gas were 3.5% HCl, 20.0% H₂, and 76.5% Ar. The deposition reactions were carried out at four different temperatures: 500, 600, 700 and 800 °C. Successful deposition of metallic nickel and copper on the ceramic particulates was observed. It was also noticed that the deposition rates varied with the types of substrates and deposited metals. This revised version was published online in November 2006 with corrections to the Cover Date.