A combinative technique to fabricate hot embossing master for PMMA tunneling sensors

A combinative approach of anisotropic bulk etching and modified plasma etching has been successfully employed in a single wafer to fabricate silicon masters for the hot embossing process. The masters hold both pyramid pits and positive profile sidewalls with smooth surfaces and steep angles. The SiO₂ layer is utilized as a etching mask with the aid of photoresist in three steps of photolithography patterning. The first polymethyl-methacrylate (PMMA)-based tunneling transducer with polymer membrane structures is fabricated by hot embossing replication with the silicon master. Consequently, the exponential relations between tunneling currents and applied deflection voltages are also reported.This work is partially supported by grants NSF/LEQSF (2001–04)-RII-02, DARPA DAAD19–02–1-0338, and NASA (2002)-Stennis-22.