Majority-carrier traps in n- and p-type epitaxial GaAs |
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| Authors: | Hasegawa F. Majerfeld A. |
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| Affiliation: | University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK; |
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| Abstract: | Majority-carrier traps are characterised for n- and p-type GaAs. Bulk and vapour-phase-epitaxial n GaAs show the same electron-trap centre (0.83 eV). No electron traps were detected in liquid-phase epitaxial n GaAs, but three hole trap centres (0.64, 0.44 and ~ 0.6 eV) were found in p GaAs. The capture cross-section and density of these centres have also been determined. |
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