IGBT器件栅极漏电问题研究

IGBT器件具有输入阻抗高和导通压降低的优点,在大功率电力电子领域具有广泛的应用,但IGBT器件的栅极漏电问题严重影响产品的成品率和可靠性,是产品制造工艺控制的关键。栅极漏电问题主要由栅氧化层质量、多晶硅栅形貌以及栅极与发射极之间的隔离等问题所致,通常造成栅极短路漏电的原因比较容易发现,但栅极轻微漏电的原因比较复杂,需要通过科学的分析,才能找到问题的根源。通过对典型栅极漏电(栅极间呈现二极管特性)问题的调查,总结了解决问题的思路和方法,对IGBT芯片制造者或器件应用者有一定的参考作用。

Research on Gate-Emitter Leakage Problem of IGBT

The IGBT has advantages of high-input impedance and low forward-voltage drop.It has been widely used in high power electronic field.However,the leakage problem between gate and emitter seriously affects the yield and reliability of IGBT,it is the key process control of the chip manufacturing.Leakage problem of the gate is mainly caused by the gate oxygen quality,poly-gate morphology and isolation problems between gate and emitter,and the leakage reasons of short code are usually easy to find,but slight leakage reasons were complex,which need through the scientific analysis to find the cause of the problem.Through to the typical gate leakage(diode characteristics) problem invest igation,the causes of the gate leakage were analyzed,and the method to resolve the gate leakage problems were introduced.All of these will be reference function for IGBT chip maker or device application