InAs0.97N0.03/InGaAs/InP multiple quantumwell lasers with emission wavelength λ=2.38 μm |
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| Authors: | Ding-Kang Shih Hao-Hsiung Lin Lin Y.H. |
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| Affiliation: | Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei ; |
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| Abstract: | Application of a novel InAsN alloy on a laser device is reported for the first time. The four-period InAs0.97N0.03-In0.53Ga0.47 As-InP strained multiple quantum well laser, grown by gas source molecular beam epitaxy with an RF-coupled plasma nitrogen source, lased under pulsed operation at 2.38 μm at 260 K. A threshold current density of 3.6 KA/cm2 at 260 K and a characteristic temperature of 62 K have been achieved |
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