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| 氧离子束辅助激光淀积生长ZnO/Si的XPS探究 | |
| 引用本文： | 李庚伟,吴正龙,邵素珍,刘志凯.氧离子束辅助激光淀积生长ZnO/Si的XPS探究[J].材料科学与工艺,2008,16(2):255-259. |
| 作者姓名： | 李庚伟 吴正龙 邵素珍 刘志凯 |
| 作者单位： | 1. 中国地质大学(北京)材料科学与工程学院,北京,100083 2. 北京师范大学,分析测试中心,北京,100875 3. 北京市第四十七中学,北京,100090 4. 中国科学院,半导体材料科学实验室,北京,100083 |
| 基金项目： | 国家高技术研究发展计划(863计划) , 中国地质大学(北京)校科研和校改项目 |
| 摘 要： | 为了探究ZnO/Si内部化学成分及有关信息,用氧离子束辅助(O+-assisted)脉冲激光淀积(PLD)法在不同实验条件下生长成ZnO/Si(111)样品.利用X射线光电子能谱(XPS)对长成的ZnO/Si异质结构进行了异位测试.通过对O1s峰及其肩状结构进行拟合、分析,得到了原子数密度比n(O)∶n(Zn),进而探究了原子数密度比与生长质量的关系.结果表明,用氧离子束辅助PLD法,可在较低的衬底温度190℃和适当O+束流条件下,生长出正化学比接近于1,且c轴单一取向最佳的ZnO/Si薄膜.用氧离子束辅助PLD淀积法生长ZnO薄膜,可以改善缺氧状况,能提供一个富氧环境. |
| 关 键 词： | ZnO/Si异质结构 氧离子束辅助PLD X射线光电子能谱(XPS) |
| 文章编号： | 1005-0299(2008)02-0255-04 |
| 修稿时间： | 2006年2月12日 |
XPS studies on ZnO/Si grown by O+-assisted PLD |
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| LI Geng-wei,WU Zheng-long,SHAO Su-zhen,LIU Zhi-kai.XPS studies on ZnO/Si grown by O+-assisted PLD[J].Materials Science and Technology,2008,16(2):255-259. | |
| Authors: | LI Geng-wei WU Zheng-long SHAO Su-zhen LIU Zhi-kai |
| Affiliation: | 1.School of Materials Science and Technology, China University of Geosciences, Beijing 100083, China; 2.Analytical and Testing Center, Beijing Normal University, Beijing 100875, China; 3.Beijing No.47 Middle School,Beijing 100090; 4.Laboratory of Semiconductor Materials Science, Chinese Academy of Sciences, Beijing 100083, China) |
| Abstract: | Several ZnO/Si(111) samples for the investigations were prepared by O+-assisted pulsed laser deposition (PLD) under various conditions. The ex-situ tests of X-ray photoelectron spectroscopy (XPS) were carried out on the heterostructure ZnO/Si samples. All the O1s peaks were deconvoluted into two features by peak-fitting procedure, and the atom density ratios of n(O) to n(Zn) were calculated. Relation between the atom density ratio and growth quality was explored. The results show that stoichiometric ZnO (n(O)∶n(Zn)=1) thin films with single orientation along axle c could be prepared at the substrate temperature of 190 ℃ and proper flux of O+ion beam by O+-assisted PLD. This technique can provide an oxygen-enriched environment for ZnO/Si preparation. |
| Keywords: | ZnO/Si heterostructure O+-assisted pulsed laser deposition (PLD) X-ray photoelectron spectroscopy(XPS) |
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