| GaN基发光二极管外量子效率研究进展 |
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| 引用本文： | 冯异. GaN基发光二极管外量子效率研究进展[J]. 光机电信息, 2010, 27(1): 23-28 |
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| 作者姓名： | 冯异 |
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| 作者单位： | 西安中为光电科技有限公司,陕西,西安,710065 |
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| 摘 要： | 近年来，GaN基发光二极管发展迅猛，但其发光效率一直是制约LED在照明领域广泛应用的主要瓶颈。本文简要介绍了提高发光二极管外量子效率的几种途径：生长分布布喇格反射层（DBR）结构，表面粗化技术，异性芯片技术，采用光子晶体结构，倒装芯片技术，激光剥离技术，透明衬底技术等。
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| 关 键 词： | 发光二级管 外量子效率 |
Enhancement of the External Quantum Efficiency of GaN-based Light Emitting Diodes |
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| FENG Yi. Enhancement of the External Quantum Efficiency of GaN-based Light Emitting Diodes[J]. OME Information, 2010, 27(1): 23-28 |
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| Authors: | FENG Yi |
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| Affiliation: | FENG Yi (Xi＇an Zoom View Optoelectronics Science ＆ Technology Co. Ltd., Xi＇an 710065,China) |
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| Abstract: | In resent years, the development of GaN-LED is rapid,but its luminous efficiency are the main problems in wide application in lighting area. Several approaches to enhance the external quantum efficiency of LED are discussed,such as growth of distributed Bragg reflector （DBR）,surfaee roughening, unusual chip, photonic crystal structure, flip-chip, surface lift-off and transparent substrate technology. |
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| Keywords: | light emitting diodes external quantum efficiency |
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