| 高效率GaAs/InGaAsHFET功率放大器 |
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| 引用本文： | 陈堂胜,杨立杰,王泉慧,李拂晓,陈效建. 高效率GaAs/InGaAsHFET功率放大器[J]. 固体电子学研究与进展, 2002, 22(2): 231-234 |
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| 作者姓名： | 陈堂胜 杨立杰 王泉慧 李拂晓 陈效建 |
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| 作者单位： | 南京电子器件研究所,210016 |
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| 摘 要： | 研制成 Ga As/ In Ga As异质结功率 FET(HFET) ,该器件是在常规的高 -低 -高分布 Ga As MESFET的基础上 ,在有源层的尾部引入 i-In Ga As层。采用 HFET研制的两级 C波功率放大器 ,在 5 .0～ 5 .5 GHz带内 ,当Vds=5 .5 V时 ,输出功率大于 3 2 .3 1 d Bm(0 .1 77W/ mm ) ,功率增益大于 1 9.3 d B,功率附加效率 (PAE)大于3 8.7% ,PAE最大达到 49.4% ,该放大器在 Vds=9.0 V时 ,输出功率大于 3 6.65 d Bm(0 .48W/ mm) ,功率增益大于 2 1 .6d B,PAE典型值 3 5 %
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| 关 键 词： | 高效率 异质结 微波场效应晶体管 单片微波集成电路 功率放大器 |
| 文章编号： | 1000-3819(2002)02-231-04 |
| 修稿时间： | 2001-09-15 |
High Efficiency GaAs/InGaAs HFET Power Amplifier |
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| CHEN Tangsheng YANG Lijie WANG Quanhui LI Fuxiao CHEN Xiaojian. High Efficiency GaAs/InGaAs HFET Power Amplifier[J]. Research & Progress of Solid State Electronics, 2002, 22(2): 231-234 |
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| Authors: | CHEN Tangsheng YANG Lijie WANG Quanhui LI Fuxiao CHEN Xiaojian |
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| Abstract: | The developed GaAs/InGaAs heterojunction power FET(HFET) is reported in this paper. Based on the conventional Hi Lo Hi profile GaAs MESFET, this device incorporates an i InGaAs layer into the tail of the active layer. At V ds =5.5 V, C band two stage power amplifier developed with the HFETs has delivered more than 32.31 dBm (0.177 W/mm) output power with power gain of more than 19.3 dB and power added efficiency ( PAE ) of more than 38.7% across the band of 5.0～5.5 GHz. The maximum PAE reaches 49.4%. The output power of the power amplifier at V ds =9.0 V is greater than 36.65 dBm (0.48 W/mm) with power gain greater than 21.6 dB and typical PAE of 35% across the same band. |
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| Keywords: | high efficiency heterojunction microwave field effect transistor (FET) monolithic microwave integrated circuit (MMIC) power amplifier |
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