High Density and Low Leakage Current in $ hbox{TiO}_{2}$ MIM Capacitors Processed at 300 $^{circ} hbox{C}$ |
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| Authors: | Cheng C.H. Lin S.H. Jhou K.Y. Chen W.J. Chou C.P. Yeh F.S. Hu J. Hwang M. Arikado T. McAlister S.P. Chin A. |
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| Affiliation: | Dept. of Mech. Eng., Nat. Chiao Tung Univ., Hsinchu; |
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| Abstract: | We report Ir/TiO2/TaN metal-insulator-metal capacitors processed at only 300degC, which show a capacitance density of 28 fF/mum2 and a leakage current of 3 times 10-8 (25degC) or 6 times 10-7 (125degC) A/cm2 at -1 V. This performance is due to the combined effects of 300degC nanocrystallized high-kappa TiO2, a high conduction band offset, and high work-function upper electrode. These devices show potential for integration in future very-large-scale-integration technologies. |
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